We manufacture and sell multi-crystalline/poly-crystalline solar wafers. We currently produce and sell multi-crystalline wafers in two principal sizes of 125 by 125 mm and 156 by 156 mm, with thicknesses from 180 and 240 microns. The main technological process of multi-crystalline wafers contains: ingot and wire saw.

Multi-crystalline Silicon Wafers

Specification of Multi-crystalline Silicon Wafer
Conductivity Type: P-Type
Crystallinity :Multi-crystalline
Crystal size :≤50 crystals per 2 cm2
Oxygen （atoms/cm3）: ≤8.0 x 1017
Carbon （atoms/cm3）: ≤5.0x 1017
Resistivity (Ω·cm): 0.5～3.0
Dopant: Boron
Life time（μs） : ≥2.0
Dimensions Tolerance （mm) : 125mmX125mm±0.5mm ,156mmX156mm±0.5mm
Wafer dull （mm) :1.5±0.5
Center Thickness （μm) :200±20
Total Thickness Variation （μm): ≤20
Warp（μm）: ≤40
Wafer cleaning : Water+detergent
Water slicing: Glycol based wafering
Saw marks（μm）:Depth ≤15
Edge defect(through wafer) Length ≤5 mm, width ≤0.5 mm
Packaging bubble: carton and wooden box
Payment: T/T, L/C
Supply Ability: 10,000,000 pcs/ month
Package: 1800 pcs/ carton
300 pcs/ box

We also provide mono-crystalline wafers, the size are 125mmX125mm and 156mmX156mm.The details can reference as follows,

Mono-crystalline Silicon Wafer

Mono Wafer Specification

Growth Method  CZ
Conductive Type  P
Dopant  B
Orientation  <100>
Off orientation  <±2。
Resistivity  1-3Ω.cm
Bulk Lifetime  ≥10us
Oxygen Content  ≤1.0*1018/cm3
Carbon Content  ≤5.0*1016/cm3
Dimension  125mmX125mm±0.5mm ,156mmX156mm±0.5mm
Diagonal  150±0.5mm  
Square Sides Angle  90±0.3•
Straight Sections Length Deviation  29.76±1.0mm
Thickness  200±20㎛ 
(minimum thickness≥180㎛) 
TTV  ≤30㎛ 
Saw mark  ≤15㎛ 
Warp  ≤50㎛ 
Chips length<0.5mm
Depth<0.3mm，
Less than 2pcs